PRODUCTS
Ceramic Targets
Ceramic Targets
Product
Purity
Density
Melting point
Application
Processing method
Surface condition
Al2O3 Target
4N
3.5g/cm³-3.9g/cm³
2054℃ 

HP
Ground
AZO Target
3N5
5.52g/cm3


Sintering
Ground
ITO Target
4N
7.15g/cm3

Usually sprayed on glass, plastic and electronic display screens. Sintering
Ground
MgF2 Target
4N
3.148g/cm3
1261℃ 

HP
Ground
B4C Target
95%
2.52g/cm3
2350℃ 

HP
Ground
Cr2O3 Target
3N
5.21g/cm3
2266℃ 

HP
Ground
Fe2O3 Target
3N
5.24g/cm3
1565℃ 

HP
Ground
SnO2 Target
3N5
6.95g/cm3
1630℃ 

HP
Ground
TiB2 Target
2N5/3N
Relative density:85% min.

Making surface coating.
HP
Ground
CrB2 Target
2N5
Relative density:80% min.

Used as wear resistant, high temperature oxidation resistant coating and neutron absorption coating in nuclear reactors.
HP
Ground
ZrB2 Target
3N
Relative density:80% min

High-temperature structural ceramics, thin film materials, composite materials and nuclear control materials.
HP Ground
IZO
4N

In2O3:90wt%,   ZnO:10wt%      

Relative density:>90% Gray


Transparent conducting thin film.
HP
Ground
IGZO
4N


Key materials for Metal Oxide TFT planar display technology .
HP
Ground
WC
3N-3N5
15.63 g/cm³ 


HP
Ground
GeSe Target
4N

667℃
Semiconductor material.
HP
Ground
GeTe Target
4N
6.14g/cm3
724℃
Used in semiconductor and optoelectronic devices.
Powder Metallary
Ground
GeSbTe
4N
6.38g/cm3

Semiconductor memory chip technology.
HP
Ground
Sb2Te3

6.50g/cm3
629℃
Thermoelectric thin film.
Smelting
Ground
VO2
3N

Intelligent window, photoelectric switch, laser protection, optical storage, uncooled infrared detector and other fields.
HP
Ground
ZnO Target
4N
 Relative density 90% min     5.6g/cm3
1975℃
Electronic, photoelectric, decorative, functional film and so on.
Sintering
Ground
ZnS Target
3N5 
4.09g/cm3
1700℃
Magnetron sputtering coating, infrared coating field.
HP
NiO Target
4N 
6.84g/cm³
1980±20℃
Ceramics,glass,catalysts, batteries and semiconductor devices.
HP
SiO2 Target
4N5
2.20 g/cm3
1713
Magnetron sputtering coating materials.
Smelting
Ground
CoO Target
3N5 
Relative density 90%min
1935℃
 Microelectronics, thin film, semiconductor.
HP
Ground
MoO3 Target
3N5 
Relative density 75%min
795℃
 Optical coating, magnetron sputtering coating.
HP
Ground
WO3 Target
3N5
Relative density 80%min
1473℃
Magnetron sputtering coating.
HP
Ground
ITZO Target
4N
Relative density 80%min


HP
Ground
CdS Target
4N
4.0g/cm3

Solar PV. HP
Ground
AlN Target
4N
3.2g/cm3
2200℃
Decorative coatings.
HP Ground
TiN Target
2N5
5.4g/cm3
2950℃
Semiconductor, CVD, PVD.
HP Ground
CrN Target
3N
6.1g/cm3
1770℃

HP Ground
MoS2 Target
3N
4.8g/cm3
1185℃
Used in high temperature and oxidizing environments, generates more power, forms protective coating film, cools down the engine and avoids over-heat.
HP Ground
FeCoB
3N5
7.52g/cm3

Sputtering deposition.
HP Ground
MoSi2
3N
6.24g/cm3
2375℃
PVD coating industry.
HP
Ground
Si3N4 Target
3N
3.2g/cm3
1900℃
Widely used in vacuum coating industry.
HP

Nb2O5 Target
4N



HP
Polishing
Ta2O5 Target
3N5
5.2g/cm3
1872℃
Sputtering coating.
HP

TiO2 Target
3N5
4.24g/cm3

Widely used in plating: uv film, protective film, magnetic film, visible light area anti-reflection film, infrared anti-reflection film, high reflection film.
HP

In2O3 Target
4N
6.9g/cm3


HP

TiC Target
3N5



HP
Polishing
IMO Target
4N



HP

SiC Target
2N5



HP
Polishing

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